Journal Publications of 2026:

1. M. Fregolent, B. Sarkar, S. Lu, J. Wang, H. Watanabe, K. Woong, C. De Santi, G. Meneghesso, E. Zanoni, Y. Honda, H. Amano, M. Meneghini , “P-channel GaN FETs on low-doped layers enabled by thermal Mg-diffusion process: demonstration and characterization,” IEEE Transactions on Electron Devices, 2026.

2. H. Cao, M. Nong, T. Liu, Z. Jiang, Z. Liu, S. Yuvaraja, X. Tang, B. Sarkar, Y. Wu, X. Li, “Impact of High Temperature Ohmic Contact Annealing Process on AlN Schottky Barrier Diodes,” Applied Physics Letters 129, 011601, 2026.

Journal Publications of 2025:

1. S. Singh, J. Wang, H. Watanabe, M. Fregolent, C. De Santi, M. Meneghini, O. Badami, J. Asubar, H. Amano, B. Sarkar, “Understanding the Ga-polar n-GaN surface after Mg-diffusion process” Physica Status Solidi A, 2500090, 2025. Corresponding author: B. Sarkar

2. A. Ashai, O. Badami, B. Sarkar, “A Normalizing Flow Based Validity-Preserving Inverse-Design Model for Nanoscale MOSFETs,” Advanced Theory and Simulations, 8, 2400988, 2025. Corresponding author: B. Sarkar.

3. G. García, J. Bolio, V. Khandelwal, G. Mainali, J. Taboada, H. Cao, B. Sarkar, X. Li, “On Ga2O3 self-switching nano-diodes,” ACS Advanced Electronic Materials, 2500177, 2025.

4. H. Cao, M. Nong, T. Liu, G. I. García, Z. Liu, X. Tang, M. Kumar, B. Sarkar, Y. Wu, X. Li, “Performance Enhancement of n-Type AlN Schottky Barrier Diodes Using Oxygen-Rich Rapid Thermal Annealing Treatment,” IEEE Transactions on Electron Devices 72, 1533, 2025.

5. M. Ishiguro, K. Sekiyama, A. Baratov, S. Maeda, T. Igarashi, N. Tajuddin, N. Islam, S. Terai, A. Yamamoto, M. Kuzuhara, B. Sarkar, H. Amano, J. Asubar, “Normally-off AlGaN/GaN MIS-HEMTs with high 2DEG mobility enabled by shallow recess and oxygen plasma treatment,” Japanese Journal of Applied Physics 64, 020904, 2025.

6. A. Singh, A. Ashai, B. Sarkar, O. Badami, “Real Time Electrostatics of Double Gate FETs with Neural Networks,” Advanced Theory and Simulations 8, e00686, 2025.

7. S. Singh, W. Kwon, X. Li, J. Wang, H. Watanabe, Y. Honda, H. Amano, B. Sarkar, “On Barrier-free Vertical GaN PN Junction Diode Enabled by Ion-implantation and Ex-situ Mg Diffusion Process,” Japanese Journal of Applied Physics 64, 090904, 2025. Corresponding author: B. Sarkar.

8. S. Singh, A. Mukherjee, A. Ashai, T. Pramanik, B. Sarkar, “On Estimating the Threshold Voltage of Vertical Junctionless GaN Power Fin-MOSFETs,” Journal of Computational Electronics 24, 169, 2025. Corresponding author: B. Sarkar.

Journal Publications of 2024:

1. J. Wang, W. Cai, W. Lu, S. Lu, E. Kano, V. Agulto, B. Sarkar, H. Watanabe, N. Ikarashi, T. Iwamoto, M. Nakajima, Y. Honda, H. Amano, “Observation of 2D-magnesium-intercalated gallium nitride superlattices,” Nature 631, 67, 2024.

2. M. Yusuf, S. Singh, A. Dasgupta, B. Sarkar, S. Roy, “A Space Mapping Augmented Compact Model for Uncertainty Quantification of GaN HEMT Devices and Circuits in the Presence of Trap Effects,” IEEE Transactions on Electron Devices, vol. 71, no. 11, pp. 6581-6587, 2024.

3. J. Patel, T. Pramanik, B. Sarkar, "Analytical Model of Center Potential in GaN Vertical Junctionless Power Fin-MOSFETs for Fast Device-Design Optimization," IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 99-106, 2024. Corresponding author: B. Sarkar.

4. H. Cao, M. Nong, J. Li, X. Tang, T. Liu, Z. Liu, B. Sarkar, Z. Lai, Y. Wu, X. Li, “Low contact resistivity at the 10-4 Ω.cm2 level fabricated directly on n-type AlN,” Applied Physics Letters 125, 081602, 2024.

5. J. Vasquez†, A. Mukherjee†, S. Singh, V. Khandelwal, S. Yuvaraja, G. Garcia, M. Rajbhar, X. Li, B. Sarkar, “Field management in NiOx/β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation,” Journal of Physics D: Applied Physics 57, 445105, 2024. [†Equal first authors]. Corresponding author: B. Sarkar.

6. B. Sarkar, J. Wang, H. Watanabe, H. Amano, “Improving the Barrier Height of N-polar GaN Schottky Diodes Using Mg-Diffusion Process,” IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1416-1420, 2024. Corresponding author: B. Sarkar.

7. Z. Yu, Y. Dai, K. Tang, T. Luo, S. Qi, S. Singh, L. Huang, J. Ye, B. Sarkar, W. Guo, “Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer,” Electronics 13, 1679, 2024. Corresponding author: B. Sarkar.

Journal Publications of 2023:

1. C. Wang, X. Xu, S. Tyagi, P.C. Rout, U. Schwingenschlögl, B. Sarkar, V. Khandelwal, X. Liu, L. Gao, M.N. Hedhili, H.N. Alshareef, X. Li, “Ti3C2TX MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors,” Advanced Materials 35, 2211738, 2023.

2. A. Ashai, A. Jadhav, A. Behera, S. Roy, A. Dasgupta, B. Sarkar, “Deep Learning Based Fast BSIM-CMG Parameter Extraction for General Input Dataset,” IEEE Transactions on Electron Devices, vol. 70, no. 7, pp. 3437-3441, 2023. Corresponding author: B. Sarkar.

3. B. Sarkar, J. Wang, O. Badami, T. Pramanik, W. Kwon, H. Watanabe, H. Amano, “Ga-polar GaN Camel Diode Enabled by a Low-cost Mg-Diffusion Process” Applied Physics Express 16, 121002, 2023. Corresponding author: B. Sarkar.

4. J. Vasquez, A. Ashai, Y. Lu, V. Khandelwal, M. Rajbhar, M. Kumar, X. Li, B. Sarkar, “A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction,” Journal of Physics D: Applied Physics 56, 065104, 2023. Corresponding author: B. Sarkar.

5. H. Pal, S. Singh, C. Guo, W. Guo, O. Badami, T. Pramanik, B. Sarkar, “Lateral P-N junction Photodiodes using Lateral Polarity Structure GaN Films: A Theoretical Perspective,” Journal of Electronic Materials 52, 2148, 2023. Corresponding author: B. Sarkar.

6. V. Khandelwal, M. Rajbhar, G. Garcia, X. Tang, B. Sarkar, X. Li, “Demonstration of β-Ga2O3 Nonvolatile Flash Memory for Oxide Electronics,” Japanese Journal of Applied Physics 62, 060902, 2023. Special recognition in the Semiconductors Today Magazine.

7. A. Mukherjee, J. Vasquez, A. Ashai, S. Yuvaraja, M. Rajbhar, B. Sarkar, X. Li, “On Band-to-Band Tunneling and Field Management in NiOx/β-Ga2O3 PN and PiN Diodes,” Journal of Physics D: Applied Physics 56, 475104, 2023. Corresponding author: B. Sarkar.

8. C. Guo, J. Zhang, S. Xia, L. Deng, K. Liu, Z. Yang, B. Cheng, B. Sarkar, W. Guo, J. Ye, “Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation,” Optics Letters 48, 4769, 2023.

Journal Publications of 2022:

1. S. Mukhopadhyay, L. Lyle, H. Pal, K. Das, L. Porter, B. Sarkar, “Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit,” Journal of Applied Physics 131, 025702, 2022. Corresponding author: B. Sarkar.

2. A. Jadhav, T. Ozawa, A. Baratov, J. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy, B. Sarkar, “An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources” IEEE Journal of the Electron Device Society, vol. 10, pp. 797-807, 2022. Corresponding author: B. Sarkar.

3. A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste, R. Collazo, Z. Sitar, B. Sarkar, “On Electrical Analysis of Al-rich p-AlGaN films for III-nitride UV light emitters,” Semiconductor Science and Technology 37, 015003, 2022. Corresponding author: B. Sarkar.

4. P. Bagheri, A. Klump, S. Washiyama, M. Breckenridge, J. Kim, Y. Guan, D. Khachariya, C. Quinones-Garcia, B. Sarkar, S. Rathkanthiwar, P. Reddy, S. Mita, R. Kirste, R. Collazo, Z. Sitar. “Doping and compensation in heavily Mg doped Al-rich AlGaN,” Applied Physics Letters 120, 082102, 2022.

Journal Publications of 2021:

1. A. Jadhav, T. Ozawa, A. Baratov, J. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy, B. Sarkar, “Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs using Rational Functions” IEEE Transactions on Electron Devices, vol. 68 no. 12, pp. 6059-6064, 2021. Corresponding author: B. Sarkar.

2. A. Jadhav, T. Ozawa, A. Baratov, J. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, Y. Honda, S. Roy, H. Amano, B. Sarkar, “Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs,” IEEE Journal of the Electron Device Society, vol. 9, pp. 570-581, 2021. Corresponding author: B. Sarkar.

3. A. Jadhav, Y. Dai, P. Upadhyay, W. Guo, B. Sarkar, “Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes,” Journal of Electronic Materials 50, 3731, 2021. Corresponding author: B. Sarkar.

4. A. Jadhav, L. Lyle, Z. Xu, K. Das, L. Porter, B. Sarkar, “Temperature Dependence of Barrier Height Inhomogeneity in β-Ga2O3 Schottky Barrier Diodes,” Journal of Vacuum Science and Technology B 39, 040601, 2021. Special recognition: Editors Pick for the journal. Corresponding author: B. Sarkar.

5. S. Mukhopadhyay, H. Pal, S. Narang, C. Guo, J. Ye, W. Guo, B. Sarkar, “Self-powered ultraviolet photodiode based on lateral polarity structure GaN films” Journal of Vacuum Science and Technology B 39, 052206, 2021. Corresponding author: B. Sarkar.

6. M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo, Z. Sitar, “High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN,” Applied Physics Letters 118, 112104, 2021.

7. R. Kirste; B. Sarkar; P. Reddy; Q. Guo; R. Collazo, Z. Sitar, “Status of the Growth and Fabrication of AlGaN based UV laser diodes for near and mid UV wavelength,” Journal of Materials Research 36, 4638, 2021.

Publications of 2020:

1. B. Sarkar and R. Collazo, “Ch.7 - Doping of AlGaN” in H. Amano, et. al. “The 2020 UV Emitter Roadmap” Journal of Physics D: Applied Physics 50, 503001, 2020. 

2. H. Xu, J. Jiang, Y. Dai, M. Cui, K. Li, X. Ge, J. Hoo, L. Yan, S. Guo, J. Ning, H. Sun, B. Sarkar, W. Guo, J. Ye, “Polarity Control and Nanoscale Optical Characterization of AlGaN-based Multiple Quantum Wells for Ultraviolet C emitters,” ACS Applied Nano Materials 3, 5335. 2020.

3. P. Bagheri, R. Kirste, P. Reddy, S. Washiyama, S. Mita, B. Sarkar, R. Collazo, Z. Sitar, “The nature of the DX state in Ge-doped AlGaN,” Applied Physics Letters 116, 222102, 2020.

4. M. Breckenridge, Q. Guo, A. Klump, B. Sarkar, Y. Guan, J. Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo, Z. Sitar, “Shallow Si donor in ion-implanted homoepitaxial AlN,” Applied Physics Letters 116, 172103, 2020.

5. P. Reddy, D. Khachariya, D. Szymanski, M. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar, E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semiconductor Science and Technology 35, 055007, 2020.

6. A. Ray, S. Bordoloi, B. Sarkar, P. Agarwal, G. Trivedi, “Numerical Simulation of Enhanced-Reliability Filleted-Gate AlGaN/GaN HEMT,” Journal of Electronic Materials 49, 2018, 2020.

7. S. Washiyama, P. Reddy, B. Sarkar, M. Breckenridge, Q. Guo, P. Bagheri, A. Klump, R. Kirste, J. Tweedie, S. Mita, Z. Sitar, R. Collazo, “The role of chemical potential in compensation control in Si: AlGaN,” Journal of Applied Physics 127, 105702, 2020.

Publications before joining IIT Roorkee:

1. B. Sarkar, P. Reddy, A. Klump, F. Kaess, R. Rounds, R. Kirste, S. Mita, E. Kohn, R. Collazo, Z. Sitar, “On Ni/Au alloyed contacts to Mg-doped GaN,” Journal of Electronic Materials 47, 305, 2018.

2. B. Sarkar, S. Mills, B. Lee, W. Pitts, V. Misra, P. Franzon, “On Using the Volatile Mem-capacitive Effect of TiO2 RRAM to Mimic the Synaptic Forgetting Process,” Journal of Electronic Materials 47, 994, 2018.

3. B. Sarkar, S. Washiyama, M. Breckenridge, A. Klump, J. Baker, P. Reddy, J. Tweedie, S. Mita, R. Kirste, D. Irving, R. Collazo, Z Sitar, "(Invited) N- and P- type Doping in Al-rich AlGaN and AlN," ECS Transactions, vol. 86, no. 12, pp. 25-30, 2018.

4. R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Kirste, R. Collazo, Z. Sitar, “Thermal Conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes,” Journal of Applied Physics 124, 105106, 2018.

5. R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann,T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo, “The influence of point defects on the thermal conductivity of AlN crystals,” Journal of Applied Physics 123, 185107, 2018.

6. R. Kirste, Q. Guo, J. Dycus, A. Franke, S. Mita, B. Sarkar, P. Reddy, J. LeBeau, R. Collazo, Z. Sitar, "6 kW/cm2 UVC laser threshold in optically pumped lasers by controlling point defect formation," Applied Physics Express 11, 082101, 2018.

7. I. Bryan, Z. Bryan, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge, Q. Guo, M. Bobea, J. Tweedie, S. Mita, D. Irving, R. Collazo, Z. Sitar, “Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD,” Applied Physics Letters 112, 062102, 2018.

8. R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo, “The thermal conductivity of single crystalline AlN,” Applied Physics Express 11, 071101, 2018.

9. P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama, F. Kaess, M. Breckenridge, B. Sarkar, B. Haidet, A. Franke, E. Kohn, R, Collazo, Z. Sitar, “Plasma Enhanced Chemical Vapor Deposition of SiO2 and SiNX on AlGaN: Band offsets and interface states as a function of Al composition,” Journal of Vacuum Science and Technology A 36, 061101, 2018.

10. B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan, R. Kirste, E. Kohn, R. Collazo, Z. Sitar, “High free carrier concentration in p-GaN grown on AlN substrates,” Applied Physics Letters 111, 032109, 2017.

11. B. Sarkar, B. Haidet, P. Reddy, R. Kirste, R. Collazo, Z. Sitar, “Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate by reactive ion etching surface treatment,” Applied Physics Express 10, 071001, 2017.

12. B. Sarkar, P. Reddy, F. Kaess, B. Haidet, J. Tweedie, S. Mita, R. Kirste, E. Kohn, R. Collazo, Z. Sitar, “(Invited) Material considerations for the development of III-nitride power devices,” ECS Transactions, vol. 80, no. 7, pp. 29-36, 2017.

13. B. Haidet, B. Sarkar, P. Reddy, I. Bryan, Z. Bryan, R. Kirste, R. Collazo, Z. Sitar, “Nonlinear analysis of Vanadium- and Titanium-based contacts to Al-rich n-AlGaN,” Japanese Journal of Applied Physics 56, 100302, 2017.

14. P. Reddy, B. Sarkar, F. Kaess, M. Gerhold, E. Kohn, R. Collazo, Z. Sitar, “Defect-free Ni/GaN Schottky barrier behavior with high temperature stability,” Applied Physics Letters, 110 011603, 2017.

15. P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge, L. Hernandez-Balderrama, B. Haidet, D. Alden, A. Franke, B. Sarkar, E. Kohn, R. Collazo, Z. Sitar, “High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: band offset and passivation studies,” Journal of Applied Physics 119, 145702, 2016.

16. B. Sarkar, B. Lee, V. Misra, “Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications,” Semiconductor Science and Technology 30, 105014, 2015.

17. B. Sarkar, N. Ramanan, S. Jayanti, N. Spigna, B. Lee, P. Franzon, V. Misra, “Dual floating gate unified MOSFET with simultaneous volatile and non-volatile operation,” IEEE Electron Device Letters, vol.35, no.1, pp.48-50, 2014.

18. B. Sarkar, B. Lee, V. Misra, "Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process," ECS Transactions, vol. 64. pp. 43-48, 2014.

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