Research Interests
Magnetic Random Access Memory, Magnetic Thin Films and Materials for Electronic Device Applications, Non-volatile Memory, Device Physics and Reliability, Reliability Characterization and Modeling of Emerging Non-volatile Memories
BioSketch
Research
On estimating the threshold voltage of vertical junctionless GaN power fin-MOSFETs
2025
Smriti Singh, Ankita Mukherjee, Aasim Ashai, Tanmoy Pramanik, Biplab Sarkar | Springer US
Journal: Journal of Computational Electronics Pages: 1-14 , Volumes: 24 (6) ,
Understanding the Role of Shape Imperfections on the Bit Error Rates of STT-MRAM Under External Magnetic Fields
2025
Sonalie Ahirwar, Ankit Kumar, Simon Van Beek, Susheel Kumar Arya, Dimitri Linten, Kurt Wostyn, Gouri Sankar Kar, Tanmoy Pramanik | IEEE
Journal: IEEE Transactions on Electron Devices
A Compact Model for Perpendicular STT-MRAM Incorporating Free and Pinned Layer Thickness Dependence, Accurate Bias Dependence, and Real-Time 3-D Switching Dynamics
2025
M F Dar, K Sheelvardhan, A Kumar, T Pramanik, S Salahuddin, C Hu, A Dasgupta | IEEE
Journal: IEEE Transactions on Electron Devices
Comparison of pinning potentials, depinning currents and scalability for domain wall-based synapses with various pinning structures
2025
G Kaur, T Pramanik | Elsevier
Journal: Journal of Magnetism and Magnetic Materials
Energy-efficient DSHE-MRAM-based in-memory computing for image segmentation
2025
S Soni, H Nehete, A Monga, G Verma, A K Shukla, T Pramanik | AIP
Journal: APL Electronic Devices Pages: 026121 , Volumes: 1 ,
Write error ballooning due to anisotropy variation within the free layer in perpendicular magnetic tunnel junctions
2025
A Nisar, S K Arya, B K Kaushik, T Pramanik | IOP Publishing
Journal: Physica Scripta Pages: 035006 , Volumes: 100(3) ,
Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study
2024
S K Arya, S Ahirwar, T Pramanik | IEEE
Journal: IEEE Magnetics Letters Pages: 4500505 , Volumes: 15 ,
Size dependence of domain wall mediated switching dynamics of perpendicular magnetic tunnel junctions in the presence of reference layer stray field
2024
A. Nisar, B K Kaushik, T Pramanik | AIP
Journal: AIP Advances Pages: 025214 , Volumes: 14 ,
Design guidelines for domain-wall-based-synapse devices–thermal stability and depinning current requirements
2024
Guntas Kaur, Tanmoy Pramanik | IEEE
Journal: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pages: 1-3 ,
Write Error Rates of Field-Assisted Spin-Orbit-Torque Switching of Perpendicular Magnetic Tunnel Junctions
2024
Sonalie Ahirwar, Tanmoy Pramanik | IEEE
Journal: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pages: 1-3 ,
An Interpretable Symbolic Regression Model for Prediction of GaN Vertical Power MOSFET Failsafe Boundaries
2024
Smriti Singh, Aasim Ashai, Ankita Mukherjee, Tanmoy Pramanik, Biplab Sarkar | IEEE
Journal: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pages: 1-3 ,
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
2023
B Sarkar, J Wang, O Badami, T Pramanik, W Kwon, H Watanabe, H Amano | IOP Publishing
Journal: Applied Physics Express Pages: 121002 , Volumes: 16(12) ,
Analytical model of center potential in GaN vertical junctionless power fin-MOSFETs for fast device-design optimization
2023
J Patel, T Pramanik, B Sarkar | IEEE
Journal: IEEE Transactions on Electron Devices Pages: 99 , Volumes: 71(1) ,
Quantifying external magnetic field immunity of the write process in perpendicular spin-transfer-torque random access memory
2023
S Ahirwar, P Mundhe, T Pramanik | IEEE
Journal: IEEE Transactions on Magnetics Pages: 1 , Volumes: 59(5) ,
Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective
2023
H Pal, S Singh, C Guo, W Guo, O Badami, T Pramanik, B Sarkar | Springer
Journal: Journal of Electronic Materials Pages: 2148 , Volumes: 52(3) ,
Impact of reference-layer stray field on the write-error rate of perpendicular spin-transfer-torque random-access memory
2023
Arshid Nisar, Tanmoy Pramanik, Brajesh Kumar Kaushik | American Physical Society
Journal: Physical Review Applied Pages: 024016 , Volumes: 19 (2) ,
Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2
2022
Sayema Chowdhury, Anupam Roy, Md Hasibul Alam, Tanmoy Pramanik, Jessica Depoy, Robert Chrostowski, Filippo Mangolini, Deji Akinwande, Sanjay K Banerjee | American Chemical Society
Journal: ACS Applied Electronic Materials Pages: 6133-6141 , Volumes: 4 (12) ,
A simulation study of stand-by and active write mode magnetic immunity of perpendicular spin-transfer-torque random-access memory
2022
Sonalie Ahirwar, Tanmoy Pramanik | IEEE
Journal: 2022 IEEE International Conference on Emerging Electronics (ICEE) Pages: 1-5 ,
Phase-Field Modeling of Chemical Vapor-Deposited 2D MoSe2 Domains with Varying Morphology for Electronic Devices and Catalytic Applications
2022
Anupam Roy, Tanmoy Pramanik, Sayema Chowdhury, Sanjay K Banerjee | American Chemical Society
Journal: ACS Applied Nano Materials Pages: 15488-15497 , Volumes: 5 (10) ,
Miscellaneous
